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    • 专利摘要:
    ABSTRACT OF THE DISCLOSUREA ceramic material has a perovskite structure and is represented byformula of (1-X)ABO3-XYZO3. ln the formula, “x" is a real number that is greaterthan O and is less than 1, each of and “Z” is one or more kinds selected from a plurality of metal ions M other than a Pb ion and alkali metal ions, is bivalent, “B” is tetravalent, ”Y” is trivalent or combination of trivalent metal ions, and ”Z” is bivalent and/or trivalent metal ions, or a bivalent and/or pentavalentmetal ions. 16
    公开号:SE1050733A1
    申请号:SE1050733
    申请日:2010-07-02
    公开日:2011-01-07
    发明作者:Rajesh Kumar Malhan；Naohiro Sugiyama；Yuji Noguchi；Masaru Miyayama
    申请人:Denso Corp；Univ Of Tokyo；
    IPC主号:
    专利说明:

    _30CERAMlC MATERIALAND ELECTRONIC DEVlCEBACKGROUND OF THE INVENTION1. Field of the lnvention _The present invention relates to a ceramic material having a perovskitestructure. The present invention also relates to an electronic device and moreparticularly to a capacitor intended for high temperature applications.2. Description of the Related ArtConventlonally, an SiCgintegrated circuit that can' operate in a hightemperature about from 25 °C to 400 °C is used in a hard condition such as avehicle. The SiC integrated circuit includes a capacitor, and the capacitorincludes a dielectric layer made of a high-permittivity material.
    The high-permittivity material is broadly classified into a high-permittivitygateinsulatlng material represented by a SiOz-based material and a HfOg-basedmaterial (hereinafter called the material 1) and a perovskite-type oxiderepresented by BaTiO3 (hereinafter called the material 2). Regarding the material2, a temperature stability of permlttivity can beimproved by replacing a part of Bawith Sr as described in A. D. Hilton and B. W. Ricketts, J. Phys. D: Appl. Phys., 29 i(1996) 1321-1325. pThe material 1 has a difficulty that the permlttivity is as small as 10 to 20.The material 2 has a difficulty that the permlttivity greatly changes withtemperature, that is, the temperature stability of permlttivity is low.
    SUMMARY OF THE lNVENTlONln view of the foregoing problems, it is an object of the present invention toprovide a ceramic material having a high permlttivity and a high temperaturestability of permlttivity. Another object of the present invention is to provide acapacitor using the ceramic material.
    A ceramic material according to a first aspect of the present invention hasa perovskite structure and is represented byformula of (1-x)ABO3-xYZO3. ln theformula, “x” is a real number that is greater than 0 and is less than 1, eachof _ and “Z” is one or more kinds selected from a plurality of metal ions M otherthan a Pb ion and alkaii metal ions, “A” is bivalent, “B” is tetravaient, “Y” is trivaientor combination of trivaient metal ions, and “Z” is bivalent and/or trivaient metal ions,or a bivalent and/or pentavalent metal ions. It can be a combination of at leasttwo metal ions of out which one is always a bivalent metal ion. The ceramicmaterial can have a high permittivity and a high temperature stability of permittivity.
    A capacitor according to a second aspect of the present invention includesa dielectric layer made of the ceramic material according to the first aspect.Because the ceramic material has a high permittivity and a high temperaturestability of permittivity, the capacitor can have a high permittivity and a hightemperature stability of permittivity. ip BRIEF DESCRIPTION OF THE DRAWINGSAdditional objects and advantages of the present invention will be morereadily apparent from the following detailed description of exemplary embodimentsJ when taken together with the accompanying drawings. In the drawings:FIG. 1 is a diagram showing manufacturing conditions of ceramic materialsaccording to a first embodiment of the present invention and a comparative»example;FIG. 2 is adiagram showing evaluation results of the ceramic materialsaccording-to the first embodimentand the comparative example;FIG. 3 is a graph showing a relationship between a value of ”x” andpermittivities. measured at 200 °C, 300 °C, and 400 °C with a measurementfrequency of1 MHz; iFIG. 4 is a graph showing a relationship between a temperature andpermittivities of a sample of x=0.6 measured with various measurementi frequencies;FIG. »5 is a graph showing a relationship between a i temperature andpermittivities of a sample of x=0 measured with various measurement frequencies;FIG. 6A is a graph showing X-ray diffraction data of a sample of x=0;2'15i FIG. 6B is a graph showing X-ray diffraction data of a sample of x=0.05;FIG. 6C is a graphshowing X-ray diffraction data of a sample of x=O.1;FIG. 6D is a graph showing X-ray diffraction data of a sample of x=O.2;FIG. 6E is a graph showing X-ray diffraction data of a sample of x=O.4;FIG. 6F is a graph showing X-ray diffraction data of a sample of x=0.6;FIG. 6G is a graph showing X-ray diffraction data of a sample of x=0.7.
    FIG. 7 is a graph showing a relationship between atemperature andpermittivities of a sample of x=0.05 with 5% Bi metal ion according to a firstembodiment example of (1-X) BaTiO3- X Bi(Ni2,3Nb1,3)O3+Bi 5%;FIG. 8 is a diagram showing manufacturing conditions of ceramic materialsaccording to a first embodiment example of (1-X) BaTIOB- X Bi(l/lg1,2Zn1,2)O3;FIG. 9 is a diagram showing evaluation results of the ceramic materialsaccording to the first embodiment example of (1-X) BaTiO3- X Bi(Mg1,2Zn1,2)O3;FIG. 10A is a graph showing a relationship between a temperature andpermittivities of a sample of x=O.2 measured with various measurementfrequencies; i IFIG. 10B is agraph showing a relationship between a temperatureandpermittivities of a sample of x=O.4 measured with various measurement,frequencies;FIG. 10C is a graph showing a relationship between a temperature andpermittivities öf a sample of x=O.4 (high density) measured with variousmeasurement frequencies; andFIG. 10D is a graph showing a relationship between a temperature andpermittivities of a sample of x=0.5 measured with various measurementfrequencies; pFIG. 11A is a graph showing X-ray diffraction data of a sample ofx=0.2;FIG. 11B is a graph showing X-ray diffraction data of a sample of x=O.4;FIG. 11C is a graph showing X-ray diffraction data of a sample ofx=0.4(High Density);_ FIG. 11D is a graph showing X-ray diffraction data of a sample of x=0.5;andFIG. 11 E is a graph showingX-ray diffraction data of a sample of x4-'O.6;3DETAlLED DESCRIPTION OF THE EXEMPLARY El/lBODll/lENTS(First Embodiment)A ceramic material according to a firstembodiment of the present inventionis represented by formula (1):(1-xßarioyxßiril/igzßnbwgoß . . . (1)wherein, "x" represents a molar ratio of Bi(Mg2/3Nb1/s)O3 to the whole amount of theceramic material. Thus, “x” is a real number that is greater than 0 and is less than1. Ceramic materials are manufactured as follows for respective cases that ”x” is0, 0.05, 0.1, 0.2, 0.4, 0.5, 0.6, and 0.7. The ceramic material of x=0 is acomparative example.
    First, BaCO3, Bi2O3, TiOg, MgO, and Nb2O5, which are materials, areweighed and are put into a plastic jar with balls, and ethanol is added. Then, thematerials are mixed by being treated with a ball mill. The amount of each of thematerials is determined in such a manner that a ratio of Ba, Bi, Ti, Mg, and Nb.corresponds to a stoichiometric proportion in the formula (1).
    Afterevaporating ethanol, the materials are put into an alumina crucible,and are pre-fired in a muffle furnace. A pre-firing temperature is a temperaturefrom 0900' °C to 1000 °C and a pre-firing time is 4 hours. The pre-firing is iperformed in air. The materials become powder by. being pre-fired. Ethanol isadded to the powder, and the powder is crushed with a ball mill.
    After evaporating ethanol, a pellet is molded from the powder by knownuniaxial pressurizing. ~A pressurizing condition is 0.5 tf/cmz and 5 minutes. Thepellet is put» into a bag and is treated with* an isotropic pressurizing in a coldisostatic pressing apparatus (ClP apparatus). A pressurizing condition is 150MPa and 30 minutes. i iThe pellet is fired in air at a temperature from 1000 °C to 1350 °C for 4i hours. Then, the pellet is annealed in air at 1100 °C for 7 hours, and therebythe.ceramic material is formed.
    A pre-firing condition and a firing .condition are set for each value of The pre-firing conditions, the firing conditions, annealing conditions, relativedensities of the formed ceramic materials are shown in FIG. 1.
    The temperature at the pre-firing is set to be as low as possible within arange where the ceramic material becomes a single phase. The temperature at4,the -firing is set to 'be as high as possible within a range where a density of theceramic material becomes sufficiently high.
    The ceramic materials formed by the above-described method areevaluated as follows. First, a thin plate having a thickness of 0.3 mm is cut outfrom the pellet of each of the ceramic materials, and the thin plate is polished on apolishing plate using polishing powder. On two sides of the polished thin plate,gold electrode layers are formed by sputtering. Each of the electrode layers iscoupled with one end of a Pt line using Ag paste, and thereby a sample is formed.
    The sample is set in an infrared lamp furnace. The other end of each of thePt lines (an end on an opposite side of the end coupled with each of the electrodelayers) is coupled with a measuring device such as an impedance analyzer, and aicapacitance'“C” is measured. Then, a permittivity “e” is calculated from the ,following formula (2). ln the formula (2), ”S” is an electrode area, that is, an areaof the thin plate, and “d" is an electrode interval, that is, a thickness of the thin plate.
    For example, “d" is a value within a range from 0.2 mm to 0.3 mm, and ”S” isavalue less than or equal to 0.3 cmz.
    C=s"-S/d...(2)Permittivities are measured at a plurality of temperatures within a rangefrom 25 °Cto 400 °C with measurement frequencies of 1 kHz, 3 kHz, 10 kvHz, 30kHz, 100 kHz, 300 kHz, and 1 MHz.ln FIG. 2, permittivities measured at 25*°C, 200 °C,.300 °C, and 400 °Cwith the measurement frequency of 1 MHz, a curie temperature, a ratio of changein permittivity, and leakage current densities are shown for each of the samples inwhich the value of “x” is 0, 0.05, 0.1, 0.2, 0.5, 0.6, and 0.7. The ratio of change inpermittivity is a ratio of the permittivity measured at 400 °C to the permittivitymeasured at 200 °C.
    A relationship between the values of “x” and the permittivities measured at200 °C, 300°C, and 400°C with the measurement frequency of 1MHz is shown inFIG. 3. iAs shown in FIG. 2 and FlG. 3, in each of the samples in which the value of“x” is greater than 0,-the ratio of change in permittivity and the leakage currentdensities are small compared with the ratio of change in permittivity and theleakage current densities of the sample in which the value of “x” is 0. Especially,- 5when the value of “x” is greater than or equal to 0.1, the ratio of change inpermlttivity is effectively reduced while keeping a high permittivity.
    FIG. 4 shows a relationship between temperature and permittivities of thesample of x=0.6 measured with the measurement frequencies of 1 kHz, 3 kHz, 10kHz, 30 kHz, 100 kHz, 300 kHz, and 1 MHz. FIG. 5 shows a relationship betweentemperature and the permittivities of the sample of x=0 measured with themeasurement frequencies of 1 kHz, 3 kHz, 10 kHz, 30 kHz, 100 kHz, 300 kHz, and1 MHz. As is obvlous from FIG. 4 and FIG. 5, in the sample of x=O.6, even whenthe measurement frequency changes, the temperature dependency of permlttivityis difficult to change compared with the sample of x=0. i iX-ray diffraction data of samples of x=0, 0.05, 0.1, 0.2, 0.5, 0.6, and 0.7 areshown in FIG. 6A, FIG. 6B, FIG. 6C, FIG. 6D, FIG. 6E, FIG. 6F, and FIG. 6G,respectively. As is obvlous from FIG. 6A-FIG. 6G, each of the samples is a signalphase and has a perovskite structure although peaks of impurities slightly remainin the X-ray diffraction data of the sample of x=0.7.
    As described above, the ceramic material according to the presentembodiment has a high permlttivity and a high temperature stability of permittivity.ln addition, the temperature dependency of permlttivity is difficult change evenwhen the measurement frequency changes. Furthermore, because the ceramicmaterial includes substantially no Pb ion and no alkali metal ion, even whenapplied to the semiconductor process, a problem is difficult to arise. “includingsubstantially no Pb ion and no alkali metal ion” means that the ceramic materialmay include a Pb ion and alkali metal ions as long as the amount of the Pb ion andthe alkali metal ions is too small to suppress the above-described effects.
    Because the ceramic material according to the present embodiment hasthe above~described effects, the ceramic material can be used as a dielectric layerof a capacitor. The capacitor may include a plurality of dielectric Iayers made ofthe ceramic material and a plurality of internal electrode layers, and the dielectricIayers and the internal electrode Iayers may be alternately stacked. The internalelectrode layer may include a conductive Ni alloy. The ceramic materialaccording to the present embodiment can also be used for various electronicdevices other thanthe capacitor.
    The ceramic material according to the present embodiment may be6125modified so as to have a structure represent by formula (3):(1-x)BaTiO3-xBi(Ni2,3Nb1,3)O3 . _ _ (3)wherein, “x” is a real number that is greater than 0 and is less than 1. ln theformula (3), Mgz* in the formula (1) is changed into Ni”. The ceramic materialhaving the structure represented by the formula (3) can have effects substantiallysimilar to the ceramic material represented by the formula (1). Especially whenthe value of “x” is greater than or equal to 0.5, the ceramic material can have ahigh permittivity and a high temperature stability of permittivity.
    The ceramic materials are manufactured for respective cases that “x” is.05, 0.1, 0.2, 0.3, 0.4 and 0.5. The high density ceramic material is difficult torealized in without excess of »Bi metal ions. Excess Bi isneeded to prepare thehigh density ceramic pallets of structure shown in formula (3). Therefore, thepresent embodiment may be modified so~ as to have a structure represent byformula (4): i(1-x)BaTiO3-xBi(Ni2,3Nb1/3)O3 + Bi (5%~15%) _ . _ (4)FlG. 7 shows a relationship between temperature and permittivitiesmeasurement frequencies of 1 kHz, 3 kHz, 10 kHz, 30 kHz, 100 kHz, 300 kHz, and1 MHz of the sample of x=0.05 and Bly' is excess of 5% the whole amount of theceramic material. As shown in FIG. 7, the replacement of Mg metal ion withNickel metal ion can increase the values of the dielectric permittivity, however, itshows strong temperature and frequency dependent characteristics. Morecomplex composition of more than two component may require to stabilize theobserved strong temperature and frequency dependent characteristics.
    The ceramic material according to the present embodiment may bemodified so as to have a structure represent by formula (5):Example: (1~x) BaTiO3-x Bi(Mg1,2Zr1/2)O3 . . . (5)wherein, “x” is a real number that is greater than 0 and is less than 1. lni the formula (5), Nb3+ (1) is changed into Zr”. Ceramic materials are manufacturedas follows for respective cases that “x” is 0.2, 0.4, 0.4(high density), 0.5, and 0.6.
    The pre-firing conditions, the firing conditions, relative densities of the formedceramic materials are shown in FIG. 8. yln FlG. 9, permittivities measured at 25 °C, 200 °C, 300 °C, and 400 °Cwith the measurement .frequency of 1 MHz, a curie temperature, a ratio of change7in permittivity, and leakage current densities are shown for each of the samples inwhich the value of “X” is 0.2, 0.4, 0.4 (high density), and 0.5. The ratio of changein permittivity is a ratio of the permittivity measured at 400 °C to the permittivitymeasured at 200 °C.
    FIG. 10A to FIG. 10D show a relationship between temperature andpermittivities and the dielectric Iosses of the sample of x=0.2, 0.4, 0.4 (highdensity), and 0.5 measured with the measurement frequencies of 1 kHz, 3 kHz, 10kHz, 30 kHz, 100 kHz, 300 kHz, and 1 MHz. As shown in FIG. 10A to FIG. 10D, ineach of the samples in which the value of'“x” is greaterthan 0.2, 'the ratio ofchange in permittivity is small compared with the ratio of change in permittivity andthe leakage current densities of the sample in which the value of is 0.2. Whenthe value of “x” is greater than or equal to 0.5, the ratio of change in permittivity iseffectively same while keeping a high permittivity but the leakage current isrelatively. increased.
    X-ray diffraction data of samples of x=0.2, 0.4, 0.4(high density), 0.5, andI O.6.are shown in FIG. 11A, FIG. 11B, FIG. 11C, FIG. 11D, and FIG. 11E,respectively. As is obvious from FIG. 11A - FIG. 11E, each of the samples islasignal phase and has a perovskite structure although peaks of impurities slightlyremainxin the X-ray diffraction data of the sample of x=0.6.The ceramic material according to the present embodiment may bemodified so as to have a structure represent by formula (6):(1-x)BaTiO3-xBi(Zn1,2Zr1,2)O3 _ _ _ (6)wherein, is a real number that is greater than 0 and is less than 1. ln thefdrmiiia (e), ivigz* and Nat* in ina fdrniuia (1) ia dnangad inta zn2* and zr”. Tnaceramic material having the structure represented by the formula (6) can haveeffects substantially similar to the ceramic material represented by the formula (1 ,3, 5). Especially when the value of “x” is greater than or equal to. 0.2 and lessthan or equal to 0.5 (0.2_<_=x§0.5), the ceramic material' can have a highpermittivity and a high temperature stability of permittivity.(Second Embodiment) (A ceramic material according to a second embodiment of the presentinvention is represented by formula (7):(i-xißarii/i", M'V,V)o_»,->.25wherein, “x” is a real number that is greater than O and is less than 1, M" is abivalent metal ion, MN is a tetravalent metal ion, and MV is a pentavalent metal ion.
    (M", MN,V) means a combination of the bivalent metal ion M" and the tetravalentmetal ion MN or a combination of the bivalent metal ion M" and the pentavalentmetal ion MV. ln the formula (7), an average valence of (M", MN,V) described justafter Ba is 4 and an average valence of (M", MN,V) described just after Bi is 3.
    Each of the metal ions M", MN, and MV is neither a Pb ion nor an alkali metal ions.
    The bivalent metal ion M" is one. or more kinds selected from a group~ consisting of Mg2+, Ni2+, and Zn”. The tetravalent metal ion MN is one or morekinds selected from a group consisting of Til” and Zr”. The pentavalent metal ionMV is one or more kinds selected from a group consisting of Nbs* and Ta5+.
    The ceramic material according to the present embodiment can bemanufactured in a manner basically. similar to the ceramic material according tothe first embodiment. However, kinds of materials and a compounding ratio areadjusted based on a stoichiometric proportion of a manufacturing ceramicmaterial.
    The ceramic material according to the present embodiment has aperovskite structure and produces effects substantially similar to the effects of theceramic material according to the first embodiment.
    (Third embodiment)A ceramiclmaterial according to a third embodiment of the presentinvention is represented by formula (8):(fxjearioß-xæi, M"')(|/|",M'V,V)o3 . (s) jwherein, “x” is a real number that is greater than O and is less than 1, M" is abivalent metal ion, M"' is a trivalent metal ion MN is a tetravalent metal ion, and MVis a pentavalent metal ion. (Bi, M'") means a combination of Bas* and the trivalentmetal ion M"' other than Bisf ln addition, (M", MN,V) means a combination of thebivalent metal ion M" and the tetravalent metal ion MN or a combination of thebivalent metal. ion M" and the pentavalent metal ion MV. ln the formula (5), anaverage valence of (M", MN,V) described just after (Bi, M"') is 3. Each of the metalions M", M'", MN, and MV is neither a Pb ion nor alkali metal ions.
    The bivalent metal ion M" is one or more kinds selected from a group2 -2+, NI +consisting of Mg , and Zn”. The trivalent metal ion M'" is a rare earth (RE)9151and is one or more kinds selected from a group consisting of Las", Ndæ, and Smæ.ln (Bi, M'"), the trivalent metal ion M'" accounts for, for example, greater than orequal to 10 % in molar ratio. When the trivalent metal ion M'" accounts for greaterthan or equal to 10 % in molar ratio, the temperature change in permittivity can beeffectively reduced. The tetravalent metal ion M'V is one or more kinds selectedfrom a group consisting of Ti4+ and Zri”. The pentavalent metal ion MV is one ormore kinds selected from a group consisting of Nb5+ and Tag”.
    The ceramic material according to the present embodiment can bemanufactured in a manner basically similar to the ceramic material according tothe first embodiment. However, kinds of materials and a compounding ratio areadjusted based on a stoichiometric proportion of a manufacturing ceramicmaterial.
    The ceramicmaterial according to the present embodiment has a"perovskite structure and produces effects substantially similar to the effects of theceramic material according to the first embodiment.
    (Fourth Embodiment)A ceramic material according to a fourth embodiment of the presentinvention is represented by formula (9):(1-x)Ba(|/i", M'V,V)o3-><(Bi, M"')(ivi",iv|”,V)o3 . . _ (9)wherein “x” is a real number that is greater than 0 and is less than 1, M" is abivalent metal ion, M"' is a trivalent metal ion, M'V is a tetravalent metal ion, MV is apentavalent metal ion. (Bi, M"') means a combination of Ba3+ and the trivalent.metal ion M'" other than Bi”. ln addition, (M", M'V,V) means a combination of thebivalent metal ion M" and the tetravalent metal ion M'V or a combination of thebivalent *metal ion M" and the pentavalent metal ion MV. ln the formula (6), anaverage valence of (M", M'V,V) described just after Ba is 4 and an average valenceof (M", M'V,V)» described just after (Bi, M'") is 3. i Each of the metal ions M", M"', M'V,and MV is neither Pb ion nor alkali metal ions.
    The bivalent metal ion M" is one or more kinds selected from a groupconsisting of Mg2+, Ni2+, and Znzf The trivalent metal ion M'" is a rare earth (RE)' and is one or more kinds selected from a group consisting of Lay", Nd3+, and Smf".ln (Bi, M"'), the trivalent metal ion M"' accounts for, for example, greater than orequal to 10 % in molar ratio. When the trivalent metal ion M"' accounts for greater.15than or equal to 10 % in molar ratio, the temperature change in permittivity iseffectively reduced. The tetravalent metal ion MN is one or more kinds selectedfrom a group consisting of Ti” and Zr”. The pentavalent metal MV is one or morekinds selected from a group consisting of Nbs* and TasïThe ceramic material according to the present embodiment can bemanufactured in a manner basically similar to the ceramic material according tothe first embodiment. However, kinds of materials and a compounding ratio areadjusted based on a stoichiometric proportion of a manufacturing ceramicmaterial. iThe ceramic material according to the present embodiment has aperovskite structure and produces effects substantially similar to the effects of theceramic material according to the first embodiment.
    The ceramic materials according to the first to fourth embodiments canalso be represented by formula (10): i(1-x)ABO3-xYZO3 . _ . (10)~ wherein ”x” is a real number that is greater than O and is less than 1, each of and “Z” is -one or more kinds selected from av plurality of metal ions M otherthan a Pb ion and alkali metal ions, is bivalent, “B” is tetravalent, "Y" is trivalentor a combination of trivalent metal ions, and “Z” is bivalent and/or, trivalent, metalions, or a bivalent and/or pentavalent metal ions. lt can be a combination of atleast two metal ions of out which one is always a bivalent metal ion. The metal ionsM include the bivalent metal ion M", the trivalent metal ionM"', the tetravalentmetal ion MW, and the pentavalent metal ion MV. The metal ions M include BazflMgzt, Nizt, znzt, Biff, Last, Natt, smßfi Tri zrti Nbffi and Tatt.
    Although the present invention has been fully described in connection withthe exemplary embodiments thereof with reference to the accompanying drawings,it is to be noted that various changes and. modifications will become apparent tothose skilled in the art.11
    权利要求:
    Claims (23)
    [1] What is claimed is:1. A ceramic material having a perovskite structure and represented by formula(1)I (1-x)ABO3-> wherein "x" is a real number that is greater than O and is less than 1,_eachof and “Z” is one or more kinds selected from a plurality of metal ionsM other than a Pb ion and alkali metal ions, “A” is bivalent, “B” is tetravalent, “Y” istrivalent or a combination of trivalent metal ion, and “Z” is bivalent, trivalent, or pentavalent, together represents a combination of at least two metal ions;
    [2] 2. The ceramic material according to claim 1, wherein
    [3] “ABO3” in the formula (1) forms a parent structure.3. The ceramic material according to claim 1 or 2, wherein“A” in the formula (1) is Ba” or a combination of Ba” and one or more kinds selected from the plurality of the metal ions M. "
    [4] 4. The ceramic material according to any one of claims 1-3, wherein “B” in the formula (1) is Ti” or a combination of Ti” and one or more kinds selected from the plurality of metal ions M.
    [5] 5. The ceramic material according to any one of claims 1-4, wherein the plurality of metal ions M includes a bivalent metal ion M", a tetravalent ' metal ion MN, and a pentavalent MV, .and“B” in the formula (1) is a combination of the bivalent metal ion M" and thetetravalent metal ion MN or a combination of the bivalent metal ion M" and the pentavalent metal ion MV.
    [6] 6. The ceramic material according to any one of claims 1-5, whereinf the plurality of metal ions M includes a trivalent metal ion M'",“Y” in the formula (1) is Bla* or a combination of Bla* and the trivalent metalion M'". 12
    [7] 7. i The ceramic material according to any one of claims 1-6, wherein the plurality of metal ions M includes a bivalent metal ion M", a tetravalentmetal ion M'V, and a pentavalent metal ion MV, and “Z” in the formula (1) is a combination of the bivalent-metal ion M" and the tetravalent metal ion M'V or a combination of the bivalent metal ion M" and the v pentavalent metal ion MV.
    [8] 8. The ceramic material according to claim 5, wherein _the bivalent metal ion M" is one or more kinds selected from a groupconsisting of Mg2+, Ni2+, and Zn”.
    [9] 9. The ceramic material according to claim 5, wherein ithe tetravalent metal ion M'V is one or more kinds selected from a groupconsisting of Ti” and Zr”.
    [10] 10. The ceramic material according to claim 5, whereinthe pentavalent metal ion MV is one or more kinds selected from a groupconsisting of Nb5+ and Taf”.
    [11] 11. The ceramic material according to claim 7, whereinthe bivalent metal ion M" is one or more kinds selected from a groupconsisting of Mgæ, Ni2+, and Zn”.
    [12] 12. The ceramic material according to claim 7, whereinthe tetravalent metal ion M'V is one or more kinds selected from a groupconsisting of Ti” and Zr”. i i
    [13] 13. The ceramic material according to claim 7, wherein g the pentavalent metal ion MV is one or more kinds selected from a group d consisting of Nb5+ and Ta5+.
    [14] 14. The ceramic material according to claim 6, wherein the trivalent metal ion M'" is one or more kinds selected from a group 13 consisting of Lag", Ndæ, and Sm”.
    [15] 15. The ceramic material according to any one of claims 1-14, wherein“A” in the formula (1) is Bazf “B” in the formula (1) is TFH, “Y” in the formula(1) is Bly", “Z” in the formula (1) is a combination of Mg” and N-bsfi and in the formula (i) is greater than or equal to 0.1 (x_-_>-0.1).
    [16] 16. The ceramic material according to any one of claims 1-14, wherein“A" in the formula (1) is Bak, “B” in the formula (1) is TF", “Y” in theformula(1) is Bißi “Z” in ine formula (1) is o combination of Ni” onoi Nosi anoi “x” in :no formula (1) is greater than or equal to 0.05 and less than or equal to 0.5 (0.05§x §0.5). '
    [17] 17. The ceramic material according to claim 16, wherein “x” in the formula (1) is greaterthan or equal to 0.05, and Big" is excess of 5% the whole amount of the ceramic material.
    [18] 18. The ceramic material according to any one of claims 1-14, wherein“A" in the formula (1) is Bazfi “B” in the formula (1) is TiM, “Y” in the formula i (1) is Big", in the formula (1) is a combination of Mg” and Zr4+, and “x” in the formula (1) is greater than or equal to 0.2 and less than or equal to 0.5 (Olšxš0.5).
    [19] 19. The ceramic material according to any one of claims 1-14, wherein i“A" in the formula (1) is Baæ, “B” in the formula (1) is Ti4+, “Y” in the formula(1) is Bly", “Z” in the formula (1) is a combination of Znz* and ZF", and “x” in the formula (1) is greater than or equal to 0.2 and less than or equal to 0.5 (02šxš 0.5).
    [20] 20. The ceramic material according to any one of claims 1-19, wherein ythe plurality of metal ions M consists of Bazfl Mgzf, Ni2+, Zn2+, Bisfl La3+, 14 Nasi smßt, Trit, zrit, Nbät, and Tatt.
    [21] 21. A capacitor comprising a dieiectric layer made of the ceramic material according to any one of claims 1-20.
    [22] 22. The capacitor according to claim 21, further comprising more of the dieiectricIayers and a plurality of internal eiectrode Iayers, wherein the dieiectric Iayers and the internal eiectrode layers are alternately stacked.
    [23] 23. The capacitor according to ciaim 22, wherein the plurality of internal t eiectrode Iayers includes a conductive Ni, Ti or Ni-Ti alloy.
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    同族专利:
    公开号 | 公开日
    JP2011011963A|2011-01-20|
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    JP5330126B2|2013-10-30|
    DE102010031004B4|2017-03-02|
    US8194392B2|2012-06-05|
    CN101941832A|2011-01-12|
    US20110002083A1|2011-01-06|
    DE102010031004A1|2011-01-13|
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    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    JP3091192B2|1998-07-29|2000-09-25|ティーディーケイ株式会社|Dielectric porcelain composition and electronic component|
    JP3760364B2|1999-07-21|2006-03-29|Ｔｄｋ株式会社|Dielectric porcelain composition and electronic component|
    JP3780851B2|2000-03-02|2006-05-31|株式会社村田製作所|Barium titanate, production method thereof, dielectric ceramic and ceramic electronic component|
    JP2002050536A|2000-07-31|2002-02-15|Murata Mfg Co Ltd|Reduction-resistant dielectric ceramic and laminated ceramic capacitor|
    DE10222746A1|2002-05-23|2003-12-04|Philips Intellectual Property|Dielectric composition based on barium titanate|
    JP4100173B2|2003-01-08|2008-06-11|株式会社村田製作所|Dielectric ceramic and multilayer ceramic capacitors|
    DE102004002204A1|2004-01-15|2005-08-11|Epcos Ag|ceramic material|
    WO2007094115A1|2006-02-17|2007-08-23|Murata Manufacturing Co., Ltd.|Piezoelectric ceramic composition|
    EP2014626A4|2006-02-27|2012-01-04|Hitachi Metals Ltd|Semiconductor ceramic composition|
    US8092706B2|2006-02-28|2012-01-10|Konica Minolta Holdings, Inc.|Piezoelectric ceramic composition|
    JP4827011B2|2006-03-10|2011-11-30|Ｔｄｋ株式会社|Ceramic powder, dielectric paste using the same, multilayer ceramic electronic component, and manufacturing method thereof|
    JP5538670B2|2006-09-15|2014-07-02|キヤノン株式会社|Piezoelectric element, liquid discharge head and ultrasonic motor using the same|
    US7525239B2|2006-09-15|2009-04-28|Canon Kabushiki Kaisha|Piezoelectric element, and liquid jet head and ultrasonic motor using the piezoelectric element|
    CN101328061A|2008-07-30|2008-12-24|吉林化工学院|High dielectric Y5V type three-rare earth doping barium titanate ceramics material and preparation thereof|US9365458B2|2012-03-22|2016-06-14|Holy Stone Enterprise Co., Ltd.|Dielectric ceramic material|
    TWI592961B|2012-03-22|2017-07-21|禾伸堂企業股份有限公司|Multilayer ceramic capacitor, mlcc|
    US10155697B2|2012-03-22|2018-12-18|Holy Stone Enterprise Co., Ltd.|Composite dielectric ceramic material having anti-reduction and high temperature stability characteristics and method for preparing same|
    KR101659143B1|2014-04-16|2016-09-22|삼성전기주식회사|Dielectric ceramic composition and multilayer ceramic capacitor comprising the same|
    JP6308554B2|2014-08-26|2018-04-11|国立研究開発法人物質・材料研究機構|Dielectric thin film|
    JP6402652B2|2015-03-05|2018-10-10|Tdk株式会社|Dielectric composition and electronic component|
    CN109180178B|2018-10-10|2021-11-02|中国科学院上海硅酸盐研究所|Barium strontium titanate-based lead-free relaxation ferroelectric ceramic with high energy storage density and preparation method thereof|
    CN109293247B|2018-10-25|2021-11-16|陕西科技大学|High-conductivity glass powder and preparation method thereof, barium titanate-based glass ceramic based on high-conductivity glass powder and preparation method thereof|
    CN112080732B|2020-07-29|2021-12-28|西安交通大学|Silicon integrated BT-BMZ film, capacitor and manufacturing method thereof|
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    申请号 | 申请日 | 专利标题
    JP2009159705A|JP5330126B2|2009-07-06|2009-07-06|Ceramic materials and capacitors|
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